Chinese Quarterly Journal of Mathematics ›› 2006, Vol. 21 ›› Issue (4): 590-596.

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On Global Boundedness of Solutions for the Drift-diffusion Semiconductor Equations

  


  1. 1. Faculty of Science,Henan University of Technology  2. Department of Mathematics,Luoyang Normal College  3. Department of Mathematics,Shandong University of Engineering 
  • Received:2005-09-15 Online:2006-12-30 Published:2023-11-22
  • About author:GUO Xiu-an(1965-),female,native of Xin'an,Henan,Ph.D.,an associate professor of Henan University of Technology,engages in partial differential equation.
  • Supported by:
     Supported the National Natural Science Foundation of China(10471080); Supported by the Natural Science Foundation of Henan Province(2004110008);

Abstract: This paper is devoted to the mixed initial-boundary value problem for the semi- conductor equations.Using Stampacchia recurrence method,we prove that the solutions are globally bounded and positive.

Key words: drift-diftusion ,  model;semiconductor ,  equations;global ,  boundedness;stampac-
chia recurrence method

CLC Number: