Chinese Quarterly Journal of Mathematics ›› 2005, Vol. 20 ›› Issue (2): 185-191.

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Asymptotic of the Solutions to the Initial Boundary Value Problem for the Diffusion Equations for Semiconductors

  

  1. Department of Mathematics, Puyang Occupation Technique College, Puyang 457000, China; Kaifeng Education College, Kaifeng 475002, China
  • Received:2004-08-27 Online:2005-06-30 Published:2024-01-23
  • About author:WANG Wen-bin(1967-),male,native of Puyang,Henan,a lecturer of Puyang Occupation Technique College,engages in PDE.

Abstract: In this paper, we study the asymptotic behavior of the solutions to the initial boundary value problem for unipolar drift diffusion equations for semiconductors. Under the proper assumptions on doping profile and initial value, we prove that the smooth solutions to these evolutionary problems tend to the unique stationary solution exponentially as time tends to infinity.

Key words: drift , difusion equations;initial boundary value problems;asymptotic behavior

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