漂移-扩散型半导体方程解的整体有界性

数学季刊 ›› 2006, Vol. 21 ›› Issue (4): 590-596.

漂移-扩散型半导体方程解的整体有界性

1. Faculty of Science,Henan University of Technology 2. Department of Mathematics,Luoyang Normal College 3. Department of Mathematics,Shandong University of Engineering

收稿日期:2005-09-15 出版日期:2006-12-30 发布日期:2023-11-22
作者简介:GUO Xiu-an(1965-),female,native of Xin'an,Henan,Ph.D.,an associate professor of Henan University of Technology,engages in partial differential equation.
基金资助:
Supported the National Natural Science Foundation of China(10471080)； Supported by the Natural Science Foundation of Henan Province(2004110008)；

On Global Boundedness of Solutions for the Drift-diffusion Semiconductor Equations

1. Faculty of Science,Henan University of Technology 2. Department of Mathematics,Luoyang Normal College 3. Department of Mathematics,Shandong University of Engineering

Received:2005-09-15 Online:2006-12-30 Published:2023-11-22
About author:GUO Xiu-an(1965-),female,native of Xin'an,Henan,Ph.D.,an associate professor of Henan University of Technology,engages in partial differential equation.
Supported by:
Supported the National Natural Science Foundation of China(10471080)； Supported by the Natural Science Foundation of Henan Province(2004110008)；

摘要/Abstract

摘要： This paper is devoted to the mixed initial-boundary value problem for the semi- conductor equations.Using Stampacchia recurrence method,we prove that the solutions are globally bounded and positive.

关键词: drift-diftusion , model;semiconductor , equations;global , boundedness;stampac-
chia recurrence method

Abstract: This paper is devoted to the mixed initial-boundary value problem for the semi- conductor equations.Using Stampacchia recurrence method,we prove that the solutions are globally bounded and positive.

Key words: drift-diftusion , model;semiconductor , equations;global , boundedness;stampac-
chia recurrence method

中图分类号:

O175.29

郭秀兰, 张玉兰, 李功胜. 漂移-扩散型半导体方程解的整体有界性[J]. 数学季刊, 2006, 21(4): 590-596.

GUO Xiu-lan, ZHANG Yu-lan, LI Gong-sheng. On Global Boundedness of Solutions for the Drift-diffusion Semiconductor Equations[J]. Chinese Quarterly Journal of Mathematics, 2006, 21(4): 590-596.

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